Electroreflectance studies of Stark shifts and polarization-induced electric fields in InGaN/GaN single quantum wells
Identifieur interne : 00A509 ( Main/Repository ); précédent : 00A508; suivant : 00A510Electroreflectance studies of Stark shifts and polarization-induced electric fields in InGaN/GaN single quantum wells
Auteurs : RBID : Pascal:04-0182158Descripteurs français
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Abstract
To observe the effects of polarization fields and screening, we have performed contacted electroreflectance (CER) measurements on In0.07Ga0.93N/GaN single quantum well light emitting diodes for different reverse bias voltages. Room-temperature CER spectra exhibited three features which are at lower energy than the GaN band gap and are associated with the quantum well. The position of the lowest-energy experimental peak, attributed to the ground-state quantum well transition, exhibited a limited Stark shift except at large reverse bias when a redshift in the peak energy was observed. Realistic band models of the quantum well samples were constructed using self-consistent Schrodinger-Poisson solutions, taking polarization and screening effects in the quantum well fully into account. The model predicts an initial blueshift in transition energy as reverse bias voltage is increased, due to the cancellation of the polarization electric field by the depletion region field and the associated shift due to the quantum-confined Stark effect. A redshift is predicted to occur as the applied field is further increased past the flatband voltage. While the data and the model are in reasonable agreement for voltages past the flatband voltage, they disagree for smaller values of reverse bias, when charge is stored in the quantum well, and no blueshift is observed experimentally. To eliminate the blueshift and screen the electric field, we speculate that electrons in the quantum well are trapped in localized states. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electroreflectance studies of Stark shifts and polarization-induced electric fields in InGaN/GaN single quantum wells</title><author><name sortKey="Kaplar, R J" uniqKey="Kaplar R">R. J. Kaplar</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Kurtz, S R" uniqKey="Kurtz S">S. R. Kurtz</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Koleske, D D" uniqKey="Koleske D">D. D. Koleske</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Fischer, A J" uniqKey="Fischer A">A. J. Fischer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0182158</idno><date when="2004-05-01">2004-05-01</date><idno type="stanalyst">PASCAL 04-0182158 AIP</idno><idno type="RBID">Pascal:04-0182158</idno><idno type="wicri:Area/Main/Corpus">00B995</idno><idno type="wicri:Area/Main/Repository">00A509</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electroreflectance</term><term>Energy gap</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Light emitting diodes</term><term>Localized states</term><term>Quantum confined Stark effect</term><term>Red shift</term><term>Semiconductor device models</term><term>Semiconductor quantum wells</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7820J</term><term>7321F</term><term>7867D</term><term>8560J</term><term>7320F</term><term>8530D</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Semiconducteur bande interdite large</term><term>Effet Stark confinement quantique</term><term>Bande interdite</term><term>Etat localisé</term><term>Electroréflectance</term><term>Déplacement vers le rouge</term><term>Diode électroluminescente</term><term>Modèle dispositif semiconducteur</term><term>Etat interface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">To observe the effects of polarization fields and screening, we have performed contacted electroreflectance (CER) measurements on In<sub>0.07</sub>Ga<sub>0.93</sub>N/GaN single quantum well light emitting diodes for different reverse bias voltages. Room-temperature CER spectra exhibited three features which are at lower energy than the GaN band gap and are associated with the quantum well. The position of the lowest-energy experimental peak, attributed to the ground-state quantum well transition, exhibited a limited Stark shift except at large reverse bias when a redshift in the peak energy was observed. Realistic band models of the quantum well samples were constructed using self-consistent Schrodinger-Poisson solutions, taking polarization and screening effects in the quantum well fully into account. The model predicts an initial blueshift in transition energy as reverse bias voltage is increased, due to the cancellation of the polarization electric field by the depletion region field and the associated shift due to the quantum-confined Stark effect. A redshift is predicted to occur as the applied field is further increased past the flatband voltage. While the data and the model are in reasonable agreement for voltages past the flatband voltage, they disagree for smaller values of reverse bias, when charge is stored in the quantum well, and no blueshift is observed experimentally. To eliminate the blueshift and screen the electric field, we speculate that electrons in the quantum well are trapped in localized states. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>95</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electroreflectance studies of Stark shifts and polarization-induced electric fields in InGaN/GaN single quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>KAPLAR (R. J.)</s1></fA11><fA11 i1="02" i2="1"><s1>KURTZ (S. R.)</s1></fA11><fA11 i1="03" i2="1"><s1>KOLESKE (D. D.)</s1></fA11><fA11 i1="04" i2="1"><s1>FISCHER (A. J.)</s1></fA11><fA14 i1="01"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>4905-4913</s1></fA20><fA21><s1>2004-05-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0182158</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>To observe the effects of polarization fields and screening, we have performed contacted electroreflectance (CER) measurements on In<sub>0.07</sub>Ga<sub>0.93</sub>N/GaN single quantum well light emitting diodes for different reverse bias voltages. Room-temperature CER spectra exhibited three features which are at lower energy than the GaN band gap and are associated with the quantum well. The position of the lowest-energy experimental peak, attributed to the ground-state quantum well transition, exhibited a limited Stark shift except at large reverse bias when a redshift in the peak energy was observed. Realistic band models of the quantum well samples were constructed using self-consistent Schrodinger-Poisson solutions, taking polarization and screening effects in the quantum well fully into account. The model predicts an initial blueshift in transition energy as reverse bias voltage is increased, due to the cancellation of the polarization electric field by the depletion region field and the associated shift due to the quantum-confined Stark effect. A redshift is predicted to occur as the applied field is further increased past the flatband voltage. While the data and the model are in reasonable agreement for voltages past the flatband voltage, they disagree for smaller values of reverse bias, when charge is stored in the quantum well, and no blueshift is observed experimentally. 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